腔键合绝缘体上硅（CSOI）
加工能力 processing capacity
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Parameter 参数 |
Specification Range 尺寸规格范围 |
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Wafer Diameter 直径 |
100, 125, 150 mm |
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Handle Layer Specifications 衬底层规格 |
|
|
Handle Thickness 衬底层厚度 |
200 – 1100 µm |
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Handle Thickness Tolerance 厚度公差 |
±5 µm |
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Stack Thickness 板叠厚度 |
280 – 1150 µm |
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Dopant Type 掺杂剂类型 |
N or P |
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Doping 掺杂 |
N type: Phos, Red Phos, Sb & As P type: Boron |
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Resistivity 电阻率 |
≤0.001 – ≥10000 Ω-cm |
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Growth Method 生长方式 |
CZ, MCZ or FZ |
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Crystal Orientation 晶体定向 |
<100>, <111> or <110> |
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Backside Finish 背面处理 |
Lapped/Etched or Polished |
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Buried Oxide Specifications 氧化物埋层规格 |
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Thermally Oxidised Buried Oxide Thickness 热氧化埋层厚度 |
0.2 – 4.0 µm grown on Handle, Device or both wafers |
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Device Layer Specifications 顶层规格 |
|
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Device Layer Thickness 顶层厚度 |
≥1.5 µm |
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Tolerance 公差 |
± 0.5 µm |
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Dopant Type掺杂剂类型 |
N or P |
|
Doping 掺杂 |
N type: Phos, Red Phos, Sb & As P type: Boron |
|
Resistivity 电阻率 |
≤0.001 – ≥10000 Ω-cm |
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Growth Method 生长方式 |
CZ, MCZ or FZ |
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Crystal Orientation 晶体定向 |
<100>, <111> or <110> |
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Buried Layer Implant埋层植入 |
N type or P type |
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Membrane Thickness/SOI Thickness 薄膜厚度/SOI厚度 |
>2 µm |
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Membrane Tolerance 公差 |
± 0.5 µm |
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Cavity Span : Membrane Thickness 腔跨度 : 薄膜厚度 |
<50:1 µm (dependent on design) |
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Minimum Bonding Size Features 最小键合尺寸 |
20 µm |
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Alignment Accuracy of Cavity to Alignment Marks 腔和定位标记的对准精度 |
± 3 µm |
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Cavity Depth 腔深度 |
1-30 µm @ ±10% 31-300 µm @ ±20% |
|
Cavity Location 腔位置 |
Handle, Device or Buried Oxide |
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